Fabrication and Integration of Ultrathin, High-Density, High-Frequency Ta Capacitors on Silicon for Power Modules
Conference
Chakraborti, P, Neuhart, N, Rataj, KP et al. (2016). Fabrication and Integration of Ultrathin, High-Density, High-Frequency Ta Capacitors on Silicon for Power Modules
. 2016-August 1958-1963. 10.1109/ECTC.2016.270
Chakraborti, P, Neuhart, N, Rataj, KP et al. (2016). Fabrication and Integration of Ultrathin, High-Density, High-Frequency Ta Capacitors on Silicon for Power Modules
. 2016-August 1958-1963. 10.1109/ECTC.2016.270
This paper demonstrates silicon-integrated, thinfilm, high-density tantalum capacitors for integrated power modules. The capacitors in form-factors of less than 75μm showed stable capacitance densities of more than 0.3 μF/mm2 with leakage of less than 0.1 μA/μF at 3 V. To the best of authors' knowledge, this is the highest capacitance density reported till date at the mentioned form-factors. Furthermore, these capacitors are integrated directly above the active silicon, enabling shorter interconnection path with lower system parasitics, leading to higher switching frequencies and lower losses. These ultra-miniaturized, substrate-compatible tantalum capacitors, thus, address the strategic need for highly-efficient, ultra-miniaturized power modules.
