Generation-recombination noise in GaN and GaN-based devices Conference

Pala, N, Rumyantsev, SL, Shur, MS et al. (2003). Generation-recombination noise in GaN and GaN-based devices . SMART BIOMEDICAL AND PHYSIOLOGICAL SENSOR TECHNOLOGY XI, 5113 217-231. 10.1117/12.488468

cited authors

  • Pala, N; Rumyantsev, SL; Shur, MS; Levinshtein, ME; Khan, MA; Simin, G; Gaska, R

authors

date/time interval

  • June 1, 2003 -

publication date

  • January 1, 2003

webpage

published in

keywords

  • 1/F NOISE
  • Acoustics
  • AlGaN
  • CHANNEL
  • Engineering
  • Engineering, Electrical & Electronic
  • FIELD-EFFECT TRANSISTORS
  • FLICKER NOISE
  • GaN
  • HFET photodetector
  • LEVEL
  • LOW-FREQUENCY NOISE
  • N-TYPE GAAS
  • Physical Sciences
  • Physics
  • Physics, Condensed Matter
  • SPECTROSCOPY
  • Science & Technology
  • TEMPERATURE
  • TOOL
  • Technology
  • generation recombination noise
  • low frequency noise

Location

  • SANTA FE, NM

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

Conference

  • 1st International Symposium on Fluctuations and Noise

publisher

  • SPIE-INT SOC OPTICAL ENGINEERING

start page

  • 217

end page

  • 231

volume

  • 5113