Developments in in-situ ellipsometer monitoring of thin film growth during reactive ion plating deposition Conference

Savrda, S, Himel, MD, Guenther, KH et al. (1990). Developments in in-situ ellipsometer monitoring of thin film growth during reactive ion plating deposition . SMART BIOMEDICAL AND PHYSIOLOGICAL SENSOR TECHNOLOGY XI, 1270 133-146. 10.1117/12.20372

cited authors

  • Savrda, S; Himel, MD; Guenther, KH; Urban, FK

authors

abstract

  • In situ ellipsometry is of interest for monitoring and control of growing films. Its extreme sensitivity to thin layers also allows the measurement of the interface film frequently formed between a growing film and the substrate. The installation and operation of an in situ system on two different vacuum coating machines is described. The system records Ψ and Δ measurements every 5 seconds during film growth. We present an algorithm for computing the thickness (d) and index (n-ik) of a growing and an interface film on a known substrate from five Ψ and Δ measurements at different times during film growth. Numerical solutions of the ellipsometer equations for d, n, and k performed using a 25 MHz 80386 microprocessor with an 80387 math co-processor require about 30 minutes. Additional solutions beyond the first five data sets require only two additional measurements. By taking data in repeated time intervals during the growth of a film, we obtain a depth profile of its optical properties.

publication date

  • January 1, 1990

Digital Object Identifier (DOI)

start page

  • 133

end page

  • 146

volume

  • 1270