Optical properties of reactive ICB aluminum oxide films deposited on Si(100) Article

Urban, FK, Levenson, LL, Hashimoto, H et al. (1988). Optical properties of reactive ICB aluminum oxide films deposited on Si(100) . APPLIED SURFACE SCIENCE, 33-34(C), 966-971. 10.1016/0169-4332(88)90405-9

cited authors

  • Urban, FK; Levenson, LL; Hashimoto, H; Usui, H; Yamada, I; Takagi, T



  • Evaluations of ellipsometer measurements on aluminum oxide ionized cluster beam (ICB) films formed by reactive deposition are presented here. Films deposited at accelerating voltages below 1.5 kV are shown to have an interface film, approximately one monolayer thick, attributable in part to oxygen exposure of the substrate immediately prior to film deposition. This indicates essentially no disruption of the silicon surface during aluminum oxide deposition. The interface film at 3 kV appears to be relatively thick and vertically inhomogeneous indicating disruption of the silicon surface during deposition. The aluminum oxide optical properties are influenced by the ICB accelerating voltage with film index (n) showing a weak maximum at 1.5 kV and film extinction coefficient (k) increasing with accelerating voltage. Further investigation of these effects is indicated. This paper uses a new method for obtaining solutions for the thickness (d) and optical properties (n and k) of absorbing films overlying substrates using ellipsometer measurements obtained at two different incidence angles. Simultaneous solutions for n, k and d are found using the "exact" Drude equations and iteration techniques implemented on a microcomputer. © 1988.

publication date

  • January 1, 1988

published in

Digital Object Identifier (DOI)

start page

  • 966

end page

  • 971


  • 33-34


  • C