Boron-doped diamond film homoepitaxially grown on high-quality chemical-vapor-deposited diamond (100) Article

Wang, CL, Irie, M, Kimura, K et al. (2001). Boron-doped diamond film homoepitaxially grown on high-quality chemical-vapor-deposited diamond (100) . JAPANESE JOURNAL OF APPLIED PHYSICS, 40(6A), 4145-4148. 10.1143/JJAP.40.4145

keywords

  • B-dope
  • CVD
  • DEFECTS
  • Hall measurement
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SURFACE
  • Science & Technology
  • cathodoluminescence
  • edge emission
  • homoepitaxial diamond

Digital Object Identifier (DOI)

publisher

  • JAPAN SOC APPLIED PHYSICS

start page

  • 4145

end page

  • 4148

volume

  • 40

issue

  • 6A