The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 nm Size Range Article

Hong, Jeongmin, Hadjikhani, Ali, Stone, Mark et al. (2016). The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 nm Size Range . IEEE TRANSACTIONS ON MAGNETICS, 52(7), 10.1109/TMAG.2016.2530622

Open Access

cited authors

  • Hong, Jeongmin; Hadjikhani, Ali; Stone, Mark; Allen, Frances I; Safonov, Vladimir; Liang, Ping; Bokor, Jeffrey; Khizroev, Sakhrat

authors

publication date

  • July 1, 2016

published in

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • MULTILAYER
  • Magnetic memory
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • Technology
  • magnetic multilayers
  • magnetic switching
  • magnetoelectronics
  • tunneling magnetoresistance (TMR)

Location

  • CA, San Diego

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

volume

  • 52

issue

  • 7