Florida International University
Edit Your Profile
FIU Discovery
Toggle navigation
Browse
Home
People
Organizations
Scholarly & Creative Works
Research Facilities
Support
MRS Internet Journal of Nitride Semiconductor Research
Journal
Overview
Identifiers
View All
Overview
publication venue for
Free excitons in strained MOCVD-grown GaN layers
. 8.
2003
Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates
2000
Low-frequency noise in SiO
2
/AlGaN/GaN heterostructures on SiC and sapphire substrates
2000
Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire
2000
Material properties of GaN in the context of electron devices
1999
Identifiers
International Standard Serial Number (ISSN)
1092-5783
