Florida International University
Edit Your Profile
FIU Discovery
Toggle navigation
Browse
Home
People
Organizations
Scholarly & Creative Works
Research Facilities
Support
Electron Device Letters
Journal
Overview
Identifiers
View All
Overview
publication venue for
Improved strained HEMT characteristics using double-heterojunction In0.65Ga0.35As/In0.52Al0.48As design.
. 10:114-116.
1989
Identifiers
International Standard Serial Number (ISSN)
0193-8576
