Breakdown Voltage Assessment of GaN HEMT Devices through Physics-Based Modeling Conference

Lashway, Christopher R, Berzoy, Alberto, Elsayad, Nour et al. (2017). Breakdown Voltage Assessment of GaN HEMT Devices through Physics-Based Modeling .

cited authors

  • Lashway, Christopher R; Berzoy, Alberto; Elsayad, Nour; Mohammed, Osama

authors

date/time interval

  • March 26, 2017 -

publication date

  • January 1, 2017

webpage

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • GaN
  • HEMTs
  • Science & Technology
  • Technology
  • finite element analysis
  • physics based modeling
  • wide band gap devices

Location

  • Firenze, ITALY

Conference

  • International Applied-Computational-Electromagnetics-Society Symposium - Italy (ACES)

publisher

  • IEEE