Breakdown Voltage Improvement and Analysis of GaN HEMTs through Field Plate Inclusion and Substrate Removal Conference

Berzoy, A, Lashway, CR, Moradisizkoohi, H et al. (2017). Breakdown Voltage Improvement and Analysis of GaN HEMTs through Field Plate Inclusion and Substrate Removal . 138-142.

cited authors

  • Berzoy, A; Lashway, CR; Moradisizkoohi, H; Mohammed, Osama A

authors

date/time interval

  • October 30, 2017 -

publication date

  • January 1, 2017

webpage

keywords

  • AlGaN
  • Engineering
  • Engineering, Electrical & Electronic
  • Field plate
  • GaN
  • HEMTs
  • Science & Technology
  • TRANSISTORS
  • Technology
  • finite element analysis
  • physics based modeling
  • wide band gap devices

Location

  • Albuquerque, NM

Conference

  • 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

publisher

  • IEEE

start page

  • 138

end page

  • 142