Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors

Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors Article

Bhardwaj, Shubhendu, Rajan, Siddharth, Volakis, John L. (2016). Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors . JOURNAL OF APPLIED PHYSICS, 119(19), 10.1063/1.4950795

Open Access

cited authors

Bhardwaj, Shubhendu; Rajan, Siddharth; Volakis, John L

sustainable development goals

SDG 03: Good Health and Well-being

authors

Bhardwaj, Shubhendu
Volakis, John

publication date

May 21, 2016

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https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000377718100003&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=e451fd656366bf1ec5554941920a9ccb

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JOURNAL OF APPLIED PHYSICS Journal

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FIELD
Physical Sciences
Physics
Physics, Applied
Science & Technology
TERAHERTZ RADIATION
WAVES

FIU Discovery

Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors Article

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sustainable development goals

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