Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors Article

Bhardwaj, Shubhendu, Rajan, Siddharth, Volakis, John L. (2016). Analysis of plasma-modes of a gated bilayer system in high electron mobility transistors . Journal of Applied Physics, 119(19), 10.1063/1.4950795

cited authors

  • Bhardwaj, Shubhendu; Rajan, Siddharth; Volakis, John L

sustainable development goals

authors

publication date

  • May 21, 2016

published in

keywords

  • FIELD
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • TERAHERTZ RADIATION
  • WAVES

Digital Object Identifier (DOI)

volume

  • 119

issue

  • 19