Insulating behavior of alkali-metal-covered GaAs(110) Article

Wang, X, Chen, C. (1996). Insulating behavior of alkali-metal-covered GaAs(110) . PHYSICAL REVIEW B, 54(19), 13436-13439. 10.1103/PhysRevB.54.13436

cited authors

  • Wang, X; Chen, C



  • A combined effort of local density approximation (LDA) and many-body calculations is aimed at an understanding of the nature of the insulating behavior of GaAs(110) under submonolayer alkali-metal coverage. In particular, a Hubbard model is constructed with its parameters extracted from LDA pseudopotential calculations. The electron hopping spectrum is calculated using an exact diagonalization technique. The combined LDA and many-body results demonstrate that the GaAs(110) under submonolayer alkali-metal coverage up to θ=0.25 is a Mott-Hubbard insulator. © 1996 The American Physical Society.

publication date

  • January 1, 1996

published in

Digital Object Identifier (DOI)

start page

  • 13436

end page

  • 13439


  • 54


  • 19