Interfacial stress concentration and dislocation generation within 4H-SiC driven by carbon inclusions: insights from experimental and molecular dynamics Article

Kong, Yafei, Zhang, Wenbin, Xie, Xinyu et al. (2026). Interfacial stress concentration and dislocation generation within 4H-SiC driven by carbon inclusions: insights from experimental and molecular dynamics . APPLIED SURFACE SCIENCE, 719 10.1016/j.apsusc.2025.165064

cited authors

  • Kong, Yafei; Zhang, Wenbin; Xie, Xinyu; Wei, Tianye; Deng, Pan; Han, Xuefeng; Cui, Can; Pi, Xiaodong; Yang, Deren; Xu, Lingmao

authors

publication date

  • February 28, 2026

published in

keywords

  • 4H-SiC
  • Carbon inclusions
  • Chemistry
  • Chemistry, Physical
  • Dislocation
  • EVOLUTION
  • GRAPHENE
  • INGOTS
  • Materials Science
  • Materials Science, Coatings & Films
  • Molecular dynamics
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • RANGE
  • STRAIN
  • Science & Technology
  • Stress
  • Technology

Digital Object Identifier (DOI)

publisher

  • ELSEVIER

volume

  • 719