Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures Article

Wang, Zheming, Zhang, Liguo, Ji, Rongkun et al. (2022). Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures . MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 150 10.1016/j.mssp.2022.106945

cited authors

  • Wang, Zheming; Zhang, Liguo; Ji, Rongkun; Kan, Xiang; Zhang, Xuan; Cai, Yong; Zhang, Baoshun

authors

publication date

  • November 1, 2022

published in

keywords

  • ACTIVATION
  • Activation
  • Annealing
  • Engineering
  • Engineering, Electrical & Electronic
  • GaN
  • ION-IMPLANTATION
  • Implantation temperature
  • Ion implantation
  • LAYERS
  • Materials Science
  • Materials Science, Multidisciplinary
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • Science & Technology
  • Technology

Digital Object Identifier (DOI)

publisher

  • ELSEVIER SCI LTD

volume

  • 150