A novel approach of modeling channel potential for Gate All Around nanowire transistor Conference

Gaffar, M, Alam, M, Mamun, SA et al. (2010). A novel approach of modeling channel potential for Gate All Around nanowire transistor . 1933-1937. 10.1109/tencon.2010.5686447

cited authors

  • Gaffar, M; Alam, M; Mamun, SA; Zaman, MA; Bhuiya, AK

authors

publication date

  • November 1, 2010

keywords

  • 40 Engineering
  • 4018 Nanotechnology

Digital Object Identifier (DOI)

Conference

  • TENCON 2010 - 2010 IEEE Region 10 Conference

publisher

  • Institute of Electrical and Electronics Engineers (IEEE)

start page

  • 1933

end page

  • 1937