A novel approach of modeling channel potential for Gate All Around nanowire transistor Conference

Gaffar, M, Alam, M, Mamun, SA et al. (2010). A novel approach of modeling channel potential for Gate All Around nanowire transistor . IEEE Region 10 Annual International Conference Proceedings TENCON, 1933-1937. 10.1109/tencon.2010.5686447

cited authors

  • Gaffar, M; Alam, M; Mamun, SA; Zaman, MA; Bhuiya, AK

authors

publication date

  • November 1, 2010

published in

keywords

  • 40 Engineering
  • 4018 Nanotechnology

Digital Object Identifier (DOI)

start page

  • 1933

end page

  • 1937