TEM determination of the misfit stress in GaInAs/(001)GaAs epitaxial systems by specimen curvature analysis
Conference
Rocher, A, Cabié, M, Ponchet, A et al. (2004). TEM determination of the misfit stress in GaInAs/(001)GaAs epitaxial systems by specimen curvature analysis
. 6 207-212.
Rocher, A, Cabié, M, Ponchet, A et al. (2004). TEM determination of the misfit stress in GaInAs/(001)GaAs epitaxial systems by specimen curvature analysis
. 6 207-212.
The elastic stress induced by a lattice mismatch between a thin epitaxial layer and a substrate is determined by the curvature method based on the Stoney approach and adapted to TEM measurements on thinned specimens. For epilayers thinner than the critical thickness for plastic relaxation, this stress is determined by measurement of the radius of curvature and the sample thickness, using conventional bright and dark field images. The measured misfit stress is about 30% lower than the theoretical value calculated for an ideal pseudomorphic layer. The possible origins of this disagreement are discussed in terms of the chemical homogeneity of the layer and the specimen geometry.
