Structure and electrical properties of pure and yttrium-doped HfO2 films by chemical solution deposition through layer by layer crystallization process Article

Liang, Hailong, Xu, Jin, Zhou, Dayu et al. (2017). Structure and electrical properties of pure and yttrium-doped HfO2 films by chemical solution deposition through layer by layer crystallization process . MATERIALS & DESIGN, 120 376-381. 10.1016/j.matdes.2017.02.019

cited authors

  • Liang, Hailong; Xu, Jin; Zhou, Dayu; Wang, Xuexia; Liu, Xiaohua; Chu, Shichao; Liu, Xiaoying

authors

publication date

  • April 15, 2017

published in

keywords

  • Electrical properties
  • GATE DIELECTRICS
  • Layer by layer crystallization process
  • Materials Science
  • Materials Science, Multidisciplinary
  • Pure and yttrium-doped HfO2
  • Science & Technology
  • THIN-FILMS
  • Technology
  • Thin films

Digital Object Identifier (DOI)

publisher

  • ELSEVIER SCI LTD

start page

  • 376

end page

  • 381

volume

  • 120