This paper presents prediction models for capacitive and inductive coupling between passive and active packaged components. The model uses mutual inductance and capacitance between a source and a receptor to predict voltage noise due to mutual parasitics with simple circuit models. These parasitic parameters are estimated from Q3D Ansys and analytical equations. Full-wave electromagnetic simulations are used to validate the accuracy of the circuit models with the estimated parasitics. Lateral and vertical coupling scenarios are studied. Near-field coupling between two transmission lines is considered to represent lateral capacitive coupling between two RF interconnects. The near-field transmission coupling based on the analytical model was -18.5 dB. However, according to 3D EM models, the coupling varies from -16 to -17.5 dB. Secondly, the model is extended and used to predict inductive coupling between a Hartly oscillator and power amplifier (P A) chips that are vertically integrated in a 3D package. The noise voltage based on the inductive coupling is 50-500 11 V, corresponding to an isolation of -85 to -65 dB, across 2-4 GHz for mutual inductances varying from 4 to 21 pH. Circuit models with Q3D estimates of parasitics are shown to replicate full-wave electromagnetic simulations with good accuracy. The model effectively estimates near-field coupling between components without needing the near-field scanning data, by solely relying on package geometry.
