10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
Article
Hao, Ronghui, Wu, Dongdong, Fu, Kai et al. (2018). 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
. ELECTRONICS LETTERS, 54(13), 848-849. 10.1049/el.2017.3981
Hao, Ronghui, Wu, Dongdong, Fu, Kai et al. (2018). 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current
. ELECTRONICS LETTERS, 54(13), 848-849. 10.1049/el.2017.3981