10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current Article

Hao, Ronghui, Wu, Dongdong, Fu, Kai et al. (2018). 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current . ELECTRONICS LETTERS, 54(13), 848-849. 10.1049/el.2017.3981

Open Access

cited authors

  • Hao, Ronghui; Wu, Dongdong; Fu, Kai; Song, Liang; Chen, Fu; Zhao, Jie; Du, Zhongkai; Zhang, Bingliang; Wang, Qilong; Yu, Guohao; Cheng, Kai; Cai, Yong; Zhang, Xinping; Zhang, Baoshun

authors

publication date

  • June 28, 2018

published in

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • Science & Technology
  • TECHNOLOGY
  • Technology

Digital Object Identifier (DOI)

publisher

  • INST ENGINEERING TECHNOLOGY-IET

start page

  • 848

end page

  • 849

volume

  • 54

issue

  • 13