Doping induced asymmetry adjacent structure in h-VN nanoribbon for the promotion of N2 fixation Article

Kong, Youchao, Fan, Donghua, Santiago, R Alain Puente et al. (2023). Doping induced asymmetry adjacent structure in h-VN nanoribbon for the promotion of N2 fixation . APPLIED SURFACE SCIENCE, 612 10.1016/j.apsusc.2022.155839

International Collaboration

cited authors

  • Kong, Youchao; Fan, Donghua; Santiago, R Alain Puente; Li, Xiaoshuang; He, Tianwei

sustainable development goals

authors

publication date

  • March 1, 2023

published in

keywords

  • 2D MATERIALS
  • Asymmetry structure
  • CATALYSTS
  • CHEMISTRY
  • COCATALYST
  • Chemistry
  • Chemistry, Physical
  • DESIGN
  • Density -functional -theory
  • EFFICIENCY
  • Electrocatalyst
  • FABRICATION
  • Materials Science
  • Materials Science, Coatings & Films
  • Nitrogen reduction reaction
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • REDUCTION
  • Science & Technology
  • TOTAL-ENERGY CALCULATIONS
  • Technology
  • VANADIUM
  • Vanadium nitride

Digital Object Identifier (DOI)

publisher

  • ELSEVIER

volume

  • 612