MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology Conference

Golonzka, O, Alzate, JG, Arslan, U et al. (2018). MRAM as Embedded Non-Volatile Memory Solution for 22FFL FinFET Technology . Technical Digest - International Electron Devices Meeting, 2018-December 18.1.1-18.1.4. 10.1109/IEDM.2018.8614620

cited authors

  • Golonzka, O; Alzate, JG; Arslan, U; Bohr, M; Bai, P; Brockman, J; Buford, B; Connor, C; Das, N; Doyle, B; Ghani, T; Hamzaoglu, F; Heil, P; Hentges, P; Jahan, R; Kencke, D; Lin, B; Lu, M; Mainuddin, M; Meterelliyoz, M; Nguyen, P; Nikonov, D; O'Brien, K; Donnell, JO; Oguz, K; Ouellette, D; Park, J; Pellegren, J; Puls, C; Quintero, P; Rahman, T; Romang, A; Sekhar, M; Selarka, A; Seth, M; Smith, AJ; Smith, AK; Wei, L; Wiegand, C; Zhang, Z; Fischer, K

abstract

  • This paper presents key features of MRAM-based non-volatile memory embedded into Intel 22FFL technology. 22FFL is a high performance, ultra low power FinFET technology for mobile and RF applications with extensive high voltage and analog support, and a high level of design flexibility at low cost1. Embedded NVM technology presented here achieves 200°C 10-year retention capability combined with>106 cycle endurance and high die yield. Technology data retention, endurance and yield capabilities are demonstrated on 7.2Mbit arrays. We describe device-level MTJ characteristics, key integration features, cell characteristics, array operation specifics, as well as key yield milestones.

authors

publication date

  • July 2, 2018

published in

Digital Object Identifier (DOI)

start page

  • 18.1.1

end page

  • 18.1.4

volume

  • 2018-December