Amplified THz Detection in p-Diamond TeraFET Induced by Fixed Drain Current
Conference
Hasan, MM, Pala, N, Shur, M. Amplified THz Detection in p-Diamond TeraFET Induced by Fixed Drain Current
. 257-258. 10.23919/USNC-URSINRSM60317.2024.10464541
Hasan, MM, Pala, N, Shur, M. Amplified THz Detection in p-Diamond TeraFET Induced by Fixed Drain Current
. 257-258. 10.23919/USNC-URSINRSM60317.2024.10464541
This paper explores the amplification of continuous wave terahertz (THz) detection in p-diamond TeraFET using constant DC current bias and investigates the influence of a constant DC current supply on resonant response. Results indicate that a low drift velocity below the instability threshold enhances THz resonant detection, amplifying signals. Conversely, high drift velocities exceeding the threshold limit eliminate resonant response, as instability dominates. The latter region behaves more like a broadband detection.