Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices Article

Rafin, SM Sajjad Hossain, Ahmed, Roni, Haque, Md Asadul et al. (2023). Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices . 14(11), 10.3390/mi14112045

Open Access International Collaboration

cited authors

  • Rafin, SM Sajjad Hossain; Ahmed, Roni; Haque, Md Asadul; Hossain, Md Kamal; Haque, Md Asikul; Mohammed, Osama A; Wang, Zeheng; Huang, Jing-Kai

authors

publication date

  • November 1, 2023

keywords

  • 4H-SIC TRENCH MOSFET
  • BREAKDOWN
  • CONVERTER
  • CURRENT COLLAPSE
  • Chemistry
  • Chemistry, Analytical
  • DESIGN
  • GAN TECHNOLOGY
  • GaN
  • HEAT-TREATMENTS
  • Instruments & Instrumentation
  • MOS CONTROLLED DIODES
  • Nanoscience & Nanotechnology
  • OF-THE-ART
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SILICON
  • Science & Technology
  • Science & Technology - Other Topics
  • Technology
  • diamond
  • power semiconductor devices
  • silicon
  • silicon carbide
  • ultrawide bandgap devices
  • wide bandgap devices

Digital Object Identifier (DOI)

publisher

  • MDPI

volume

  • 14

issue

  • 11