Forming mechanism of Te-based conductive-bridge memories Conference

Mendes, M Kazar, Martinez, E, Marty, A et al. (2018). Forming mechanism of Te-based conductive-bridge memories . APPLIED SURFACE SCIENCE, 432 34-40. 10.1016/j.apsusc.2017.07.187

Open Access International Collaboration

cited authors

  • Mendes, M Kazar; Martinez, E; Marty, A; Veillerot, M; Yamashita, Y; Gassilloud, R; Bernard, M; Renault, O; Barrett, N

authors

date/time interval

  • August 28, 2016 -

publication date

  • February 28, 2018

published in

keywords

  • CBRAM
  • Chemistry
  • Chemistry, Physical
  • HAXPES
  • Interface chemistry
  • Materials Science
  • Materials Science, Coatings & Films
  • Oxygen scavenging
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • RRAM
  • Science & Technology
  • THERMAL-STABILITY
  • Technology
  • X-RAY PHOTOEMISSION

Location

  • FRANCE, Paris

Digital Object Identifier (DOI)

Conference

  • 32nd European Conference on Surface Science (ECOSS)

publisher

  • ELSEVIER SCIENCE BV

start page

  • 34

end page

  • 40

volume

  • 432