Effect of gate leakage current on noise in AlGaN/GaN HFETs Conference

Rumyantsev, SL, Pala, N, Shur, MS et al. (2000). Effect of gate leakage current on noise in AlGaN/GaN HFETs . 1 938-941.

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Levinshtein, ME; Gaska, R; Hu, X; Yang, J; Simin, G; Khan, MA

authors

date/time interval

  • September 24, 2000 -

publication date

  • January 1, 2000

webpage

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • FIELD-EFFECT TRANSISTORS
  • GaN
  • HFET
  • LOW-FREQUENCY NOISE
  • MOS-HFET
  • Optics
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • Science & Technology
  • Technology
  • correlation
  • gate current
  • noise

Location

  • NAGOYA, JAPAN

International Standard Book Number (ISBN) 10

Conference

  • International Workshop on Nitride Semiconductors (IWN 2000)

publisher

  • INST PURE APPLIED PHYSICS

start page

  • 938

end page

  • 941

volume

  • 1