DRAM Retention Behavior with Accelerated Aging in Commercial Chips Article

Bepary, Md Kawser, Talukder, Bashir Mohammad Sabquat Bahar, Rahman, Md Tauhidur. (2022). DRAM Retention Behavior with Accelerated Aging in Commercial Chips . Applied Sciences (Switzerland), 12(9), 10.3390/app12094332

Open Access

cited authors

  • Bepary, Md Kawser; Talukder, Bashir Mohammad Sabquat Bahar; Rahman, Md Tauhidur

publication date

  • May 1, 2022

published in

keywords

  • COUNTERFEIT INTEGRATED-CIRCUITS
  • Chemistry
  • Chemistry, Multidisciplinary
  • Engineering
  • Engineering, Multidisciplinary
  • Materials Science
  • Materials Science, Multidisciplinary
  • Physical Sciences
  • Physics
  • Physics, Applied
  • RELIABILITY
  • Science & Technology
  • Technology
  • accelerated aging
  • bias temperature instability (BTI)
  • dynamic random access memory (DRAM)
  • retention error
  • time-dependent dielectric breakdown (TDDB)

Digital Object Identifier (DOI)

volume

  • 12

issue

  • 9