Design Analysis of InN/InGaN Quantum Well Laser with GaN Layers at 1320-1350 nm Wavelength

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Design Analysis of InN/InGaN Quantum Well Laser with GaN Layers at 1320-1350 nm Wavelength Conference

Polash, Md Mobarak Hossain, Alam, M Shah. (2014). Design Analysis of InN/InGaN Quantum Well Laser with GaN Layers at 1320-1350 nm Wavelength .

cited authors

Polash, Md Mobarak Hossain; Alam, M Shah

authors

Alam, Mohammad Shah

date/time interval

April 10, 2014 -

publication date

January 1, 2014

webpage

https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000358383900066&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=e451fd656366bf1ec5554941920a9ccb

keywords

Computer Science
Computer Science, Theory & Methods
Engineering
Engineering, Electrical & Electronic
GAIN
INN
OPERATION
Science & Technology
Technology
Telecommunications
interband momentum matrix element
k . p method
optical gain
spontaneous emission rate
wurtzite strained semiconductor

Location

Dhaka, BANGLADESH

Conference

1st International Conference on Electrical Engineering and Information and Communication Technology (ICEEICT)

publisher

IEEE