Design Analysis of InN/InGaN Quantum Well Laser with GaN Layers at 1320-1350 nm Wavelength

Design Analysis of InN/InGaN Quantum Well Laser with GaN Layers at 1320-1350 nm Wavelength Conference

Polash, Md Mobarak Hossain, Alam, M Shah. (2014). Design Analysis of InN/InGaN Quantum Well Laser with GaN Layers at 1320-1350 nm Wavelength . 2014 1ST INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND INFORMATION & COMMUNICATION TECHNOLOGY (ICEEICT 2014)

cited authors

Polash, Md Mobarak Hossain; Alam, M Shah

authors

Alam, Mohammad Shah

date/time interval

April 10, 2014 -

publication date

January 1, 2014

webpage

https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000358383900066&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=e451fd656366bf1ec5554941920a9ccb

published in

2014 1ST INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING AND INFORMATION & COMMUNICATION TECHNOLOGY (ICEEICT 2014) Journal

keywords

Computer Science
Computer Science, Theory & Methods
Engineering
Engineering, Electrical & Electronic
GAIN
INN
OPERATION
Science & Technology
Technology
Telecommunications
interband momentum matrix element
k . p method
optical gain
spontaneous emission rate
wurtzite strained semiconductor

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