True Random Number Generation Using Latency Variations of FRAM Article

Rashid, Md Imtiaz, Ferdaus, Farah, Talukder, BMS Bahar et al. (2021). True Random Number Generation Using Latency Variations of FRAM . IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 29(1), 14-23. 10.1109/TVLSI.2020.3018998

cited authors

  • Rashid, Md Imtiaz; Ferdaus, Farah; Talukder, BMS Bahar; Henny, Paul; Beal, Aubrey N; Rahman, Md Tauhidur

authors

publication date

  • January 1, 2021

webpage

published in

keywords

  • Capacitance
  • Capacitors
  • Computer Science
  • Computer Science, Hardware & Architecture
  • Engineering
  • Engineering, Electrical & Electronic
  • FLASH MEMORY
  • Ferroelectric films
  • Ferroelectric random access memory (FRAM)
  • NOISE
  • Nonvolatile memory
  • ROUGHNESS
  • Random access memory
  • Robustness
  • Science & Technology
  • Technology
  • Timing
  • memory-based TRNG
  • true random number generation (TRNG)

Digital Object Identifier (DOI)

publisher

  • IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

start page

  • 14

end page

  • 23

volume

  • 29

issue

  • 1