Novel concepts in functional resistive switching memories Article

Qian, K, Nguyen, VC, Chen, T et al. (2016). Novel concepts in functional resistive switching memories . 4(41), 9637-9645. 10.1039/c6tc03447k

cited authors

  • Qian, K; Nguyen, VC; Chen, T; Lee, PS


  • Miniaturization of electronic devices to gain speed and reduce cost is no longer the only criterion for emerging technological needs. The devices with advanced functionalities such as flexibility, stretchability, transparency, and environmental robustness have significant advantages and added value in different areas for future electronics' applications. Data storage devices are one of the critical and fundamental components in fully integrated electronics. The functional resistive switching random access memory (RRAM) device, which is one of the most promising candidates for the next generation of non-volatile memory for data storage, has attracted immense attention because of its speed, ease of fabrication and scalability. In this paper, the recent progress, materials' selection, device architecture, and the emerging multi-functional RRAM devices are reviewed.

publication date

  • January 1, 2016

Digital Object Identifier (DOI)

start page

  • 9637

end page

  • 9645


  • 4


  • 41