Solvent vapor annealing of an insoluble molecular semiconductor Article

Amassian, A, Pozdin, VA, Li, R et al. (2010). Solvent vapor annealing of an insoluble molecular semiconductor . JOURNAL OF MATERIALS CHEMISTRY, 20(13), 2623-2629. 10.1039/b923375j

cited authors

  • Amassian, A; Pozdin, VA; Li, R; Smilgies, DM; Malliaras, GG

authors

abstract

  • Solvent vapor annealing has been proposed as a low-cost, highly versatile, and room-temperature alternative to thermal annealing of organic semiconductors and devices. In this article, we investigate the solvent vapor annealing process of a model insoluble molecular semiconductor thin film - pentacene on SiO 2 exposed to acetone vapor - using a combination of optical reflectance and two-dimensional grazing incidence X-ray diffraction measurements performed in situ, during processing. These measurements provide valuable and new insight into the solvent vapor annealing process; they demonstrate that solvent molecules interact mainly with the surface of the film to induce a solid-solid transition without noticeable swelling, dissolving or melting of the molecular material. © 2010 The Royal Society of Chemistry.

publication date

  • March 23, 2010

published in

Digital Object Identifier (DOI)

start page

  • 2623

end page

  • 2629

volume

  • 20

issue

  • 13