Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions Article

Lyashenko, DA, Zakhidov, AA, Pozdin, VA et al. (2010). Fabrication of high-mobility poly(3-hexylthiophene) transistors at ambient conditions . 11(9), 1507-1510. 10.1016/j.orgel.2010.05.016

cited authors

  • Lyashenko, DA; Zakhidov, AA; Pozdin, VA; Malliaras, GG

abstract

  • We report on the fabrication of high-mobility organic thin-film transistors (OTFTs) made and tested under ambient conditions. A bottom gate, bottom contact architecture was used with a layer of poly(3-hexylthiophene) deposited on a 50 nm thick Al2O3 dielectric with pre-patterned Au source and drain electrodes. Fluoroalkyl trichlorosilane treatment of the Al 2O3 dielectric was found to significantly improve device performance. The field-effect hole mobility reproducibly reached 0.2 cm 2 V-1 s-1 (best device 0.29 cm2 V-1 s-1) with an on/off ratio of 104. Electrical and synchrotron X-ray scattering characterization shows that an interaction at the FOTS/P3HT interface is responsible for the high performance of these devices. The fabrication method described here is carried out under ambient conditions and does not require any post-deposition annealing or vacuum drying steps for the organic film; therefore it can simplify the manufacturing of OTFTs. © 2010 Elsevier B.V. All rights reserved.

publication date

  • January 1, 2010

Digital Object Identifier (DOI)

start page

  • 1507

end page

  • 1510

volume

  • 11

issue

  • 9