Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties
Article
Yuen, JD, Pozdin, VA, Young, AT et al. (2020). Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties
. 174 10.1016/j.dyepig.2019.108014
Yuen, JD, Pozdin, VA, Young, AT et al. (2020). Perylene-diimide-based n-type semiconductors with enhanced air and temperature stable photoconductor and transistor properties
. 174 10.1016/j.dyepig.2019.108014
We report the synthesis and characterization of highly air and temperature stable, solution-processed, n-type organic semiconductors: a perylene-diimide monomer and a perylene-diimide-based pendant polymer. When integrated into a transistor structure, both materials possess pure n-type transport with mobility as high as 10−5 cm2 V−1 s−1 for the polymer. The organic semiconductors exhibit good photoconductor properties, with photocurrent to dark current ratios of up to 103 for the monomer, despite its lower FET mobility. The differences in transistor and photoconductor properties suggest different applications for each material. Both materials can be processed in air, and their transport properties have good air stability, improving with annealing even up to 200 °C in air. It is notable that such air-stable photoconductivity and transport properties have rarely been reported for n-type organic semiconductors before, as most n-type organic semiconductors are not stable in air. Hence, these materials may have potential in a wide range of applications.
