The terahertz (THz) region of electromagnetic spectrum covers the frequency range from roughly 100 GHz to 10 THz. THz wavelengths have several properties that could promote their use as sensing and imaging tool. Field effect transistors (FETs) operating in the THz range are competitive for THz detection or mixing applications and there is an intense interest and research to apply the TeraFET arrays for compact and efficient THz electronic sources. Plasma waves–oscillations of the electron density in time and space–have properties that depend on the electron density and on the dimensions and geometry of the electronic system. Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs was reported for the devices with the gate width, W of 10 μm and the gate length L of ~130 nm at the temperature range of 8-350 K. P-diamond has been proposed for plasmonic THz applications and its ultimate potential for THz and infrared plasmonic detection.
