Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress
Article
Paxinos, K, Antoniou, G, Afouxenidis, D et al. (2020). Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress
. APPLIED PHYSICS LETTERS, 116(16), 163505.
Paxinos, K, Antoniou, G, Afouxenidis, D et al. (2020). Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress
. APPLIED PHYSICS LETTERS, 116(16), 163505.