Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress Article

Paxinos, K, Antoniou, G, Afouxenidis, D et al. (2020). Low voltage thin film transistors based on solution-processed In2O3: W. A remarkably stable semiconductor under negative and positive bias stress . APPLIED PHYSICS LETTERS, 116(16), 163505.

cited authors

  • Paxinos, K; Antoniou, G; Afouxenidis, D; Mohamed, A; Dikko, U; Tsitsimpelis, I; Milne, WI; Nathan, A; Adamopoulos, G

authors

publication date

  • January 1, 2020

published in

publisher

  • AIP Publishing LLC

start page

  • 163505

volume

  • 116

issue

  • 16