Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes Conference

Sawyer, S, Rumyantsev, SL, Pala, N et al. (2005). Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes . 78-83. 10.1142/9789812702036_0013

cited authors

  • Sawyer, S; Rumyantsev, SL; Pala, N; Shur, MS; Bilenko, Y; Gaska, R; Kosterin, PV; Salzberg, BM

authors

date/time interval

  • August 4, 2004 -

publication date

  • January 1, 2005

webpage

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • Science & Technology
  • Technology

Location

  • Rensselaer Polytech Inst, Troy, NY

Digital Object Identifier (DOI)

International Standard Book Number (ISBN) 10

Conference

  • IEEE Lester Eastman Conference on High Performance Devices

publisher

  • WORLD SCIENTIFIC PUBL CO PTE LTD

start page

  • 78

end page

  • 83