Low-frequency noise in SiO<inf>2</inf>/AlGaN/GaN heterostructures on sic and sapphire substrates

Low-frequency noise in SiO2/AlGaN/GaN heterostructures on sic and sapphire substrates Article

Pala, N, Gaska, R, Shur, M et al. (2000). Low-frequency noise in SiO2/AlGaN/GaN heterostructures on sic and sapphire substrates . 595 W1191-W1196.

The low-frequency noise in GaN-based Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (MOS-HFETs) and HFETs on sapphire and n-SiC substrates were studied. Hooge parameter at zero gate bias was calculated about 8 × 10-4 for both types of the devices. The AlGaN/GaN MOS-HFETs exhibited extremely low gate leakage current and much lower noise at both positive and negative gate biases. These features demonstrate the high quality of the SiO2AlGaN heterointerface and feasibility of this technology for high-power microwave transmitter and high-power, high-temperature switches. © 2000 Materials Research Society.