Thin n-GaN films with low level of 1/f noise Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2001). Thin n-GaN films with low level of 1/f noise . ELECTRONICS LETTERS, 37(11), 720-721. 10.1049/el:20010468

Industry Collaboration International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Gaska, R; Levinshtein, ME; Khan, MA; Simin, G; Hu, X; Yang, J

authors

publication date

  • May 24, 2001

webpage

published in

keywords

  • Engineering
  • Engineering, Electrical & Electronic
  • LOW-FREQUENCY NOISE
  • Science & Technology
  • Technology

Digital Object Identifier (DOI)

publisher

  • INST ENGINEERING TECHNOLOGY-IET

start page

  • 720

end page

  • 721

volume

  • 37

issue

  • 11