HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam Article

Tokranov, V, Rumyantsev, SL, Shur, MS et al. (2007). HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam . Physica Status Solidi - Rapid Research Letetrs, 1(5), 199-201. 10.1002/pssr.200701136

Industry Collaboration International Collaboration

keywords

  • DIELECTRICS
  • Materials Science
  • Materials Science, Multidisciplinary
  • OXIDE
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • Science & Technology
  • Technology

Digital Object Identifier (DOI)

start page

  • 199

end page

  • 201

volume

  • 1

issue

  • 5