HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam Article

Tokranov, V, Rumyantsev, SL, Shur, MS et al. (2007). HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam . PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 1(5), 199-201. 10.1002/pssr.200701136

Industry Collaboration International Collaboration

cited authors

  • Tokranov, V; Rumyantsev, SL; Shur, MS; Gaska, R; Oktyabrsky, S; Jain, R; Pala, N

authors

publication date

  • October 1, 2007

webpage

published in

keywords

  • DIELECTRICS
  • Materials Science
  • Materials Science, Multidisciplinary
  • OXIDE
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Physics, Condensed Matter
  • Science & Technology
  • Technology

Digital Object Identifier (DOI)

publisher

  • WILEY-V C H VERLAG GMBH

start page

  • 199

end page

  • 201

volume

  • 1

issue

  • 5