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AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
Article
Hu, X, Deng, J, Pala, N
et al
. (2003). AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN .
APPLIED PHYSICS LETTERS,
82(8), 1299-1301. 10.1063/1.1555282
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Hu, X, Deng, J, Pala, N
et al
. (2003). AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN .
APPLIED PHYSICS LETTERS,
82(8), 1299-1301. 10.1063/1.1555282
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Overview
cited authors
Hu, X; Deng, J; Pala, N; Gaska, R; Shur, MS; Chen, CQ; Yang, J; Simin, G; Khan, MA; Rojo, JC; Schowalter, LJ
authors
Pala, Nezih
publication date
February 24, 2003
published in
APPLIED PHYSICS LETTERS
Journal
Research
keywords
ALUMINUM NITRIDE
ELASTIC STRAIN RELAXATION
GAN-ALN
Physical Sciences
Physics
Physics, Applied
Science & Technology
Identifiers
Digital Object Identifier (DOI)
https://doi.org/10.1063/1.1555282
Additional Document Info
publisher
AMER INST PHYSICS
start page
1299
end page
1301
volume
82
issue
8
Referenced in
2
patents
45
readers on Mendeley
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