AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Article

Hu, X, Deng, J, Pala, N et al. (2003). AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN . APPLIED PHYSICS LETTERS, 82(8), 1299-1301. 10.1063/1.1555282

Open Access Industry Collaboration

cited authors

  • Hu, X; Deng, J; Pala, N; Gaska, R; Shur, MS; Chen, CQ; Yang, J; Simin, G; Khan, MA; Rojo, JC; Schowalter, LJ

authors

publication date

  • February 24, 2003

webpage

published in

keywords

  • ALUMINUM NITRIDE
  • ELASTIC STRAIN RELAXATION
  • GAN-ALN
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

start page

  • 1299

end page

  • 1301

volume

  • 82

issue

  • 8