Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2003). Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region . JOURNAL OF APPLIED PHYSICS, 93(12), 10030-10034. 10.1063/1.1574599

International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Levinshtein, ME; Khan, MA; Simin, G; Yang, J

authors

publication date

  • June 15, 2003

webpage

published in

keywords

  • 1/F NOISE
  • GAN
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

start page

  • 10030

end page

  • 10034

volume

  • 93

issue

  • 12