Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2001). Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors . JOURNAL OF APPLIED PHYSICS, 90(1), 310-314. 10.1063/1.1372364

Open Access International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Gaska, R; Levinshtein, ME; Khan, MA; Simin, G; Hu, X; Yang, J

authors

publication date

  • July 1, 2001

webpage

published in

keywords

  • 1/F NOISE
  • GAAS
  • MOBILITY
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SAPPHIRE
  • SPECTROSCOPY
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

start page

  • 310

end page

  • 314

volume

  • 90

issue

  • 1