Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors Article

Rumyantsev, SL, Pala, N, Shur, MS et al. (2000). Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors . JOURNAL OF APPLIED PHYSICS, 88(11), 6726-6730. 10.1063/1.1321790

Open Access International Collaboration

cited authors

  • Rumyantsev, SL; Pala, N; Shur, MS; Gaska, R; Levinshtein, ME; Khan, MA; Simin, G; Hu, X; Yang, J

authors

publication date

  • December 1, 2000

webpage

published in

keywords

  • 1/F NOISE
  • LOW-FREQUENCY NOISE
  • MODFETS
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

start page

  • 6726

end page

  • 6730

volume

  • 88

issue

  • 11