Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
Article
Rumyantsev, SL, Pala, N, Shur, MS et al. (2000). Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
. JOURNAL OF APPLIED PHYSICS, 88(11), 6726-6730. 10.1063/1.1321790
Rumyantsev, SL, Pala, N, Shur, MS et al. (2000). Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors
. JOURNAL OF APPLIED PHYSICS, 88(11), 6726-6730. 10.1063/1.1321790