Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures Article

Rumyantsev, SL, Deng, Y, Borovitskaya, E et al. (2002). Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures . JOURNAL OF APPLIED PHYSICS, 92(8), 4726-4730. 10.1063/1.1508432

Industry Collaboration International Collaboration

cited authors

  • Rumyantsev, SL; Deng, Y; Borovitskaya, E; Dmitriev, A; Knap, W; Pala, N; Shur, MS; Levinshtein, ME; Khan, MA; Simin, G; Yang, J; Hu, X

authors

publication date

  • October 15, 2002

webpage

published in

keywords

  • 1/F NOISE
  • 300-K
  • AMPLIFIERS
  • BAND
  • DEVICES
  • GAAS-MESFET
  • GENERATION-RECOMBINATION NOISE
  • HEMT
  • LEVEL
  • Physical Sciences
  • Physics
  • Physics, Applied
  • SPECTROSCOPY
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

start page

  • 4726

end page

  • 4730

volume

  • 92

issue

  • 8