Highly doped thin-channel GaN-metal-semiconductor field-effect transistors Article

Gaska, R, Shur, MS, Hu, X et al. (2001). Highly doped thin-channel GaN-metal-semiconductor field-effect transistors . APPLIED PHYSICS LETTERS, 78(6), 769-771. 10.1063/1.1344577

Open Access Industry Collaboration

cited authors

  • Gaska, R; Shur, MS; Hu, X; Yang, JW; Tarakji, A; Simin, G; Khan, A; Deng, J; Werner, T; Rumyantsev, S; Pala, N

authors

publication date

  • February 5, 2001

webpage

published in

keywords

  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

start page

  • 769

end page

  • 771

volume

  • 78

issue

  • 6