Low-frequency noise in Al0.4GaN0.6 thin films (50 nm) was measured at room and elevated temperatures as function of gate and drain voltages. Both 1/f noise and generation-recombination (g-r) noise were observed. Hooge parameter, a, was estimated to be about 7. The activation energy for observed g-r noise was found to be Ea ∼ 1.0 eV. This activation energy is consistent with the activation energy observed for g-r noise in AlGaN/GaN HFETs.
