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Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures
Article
Muravjov, AV, Veksler, DB, Popov, VV
et al
. (2010). Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures .
APPLIED PHYSICS LETTERS,
96(4), 10.1063/1.3292019
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Muravjov, AV, Veksler, DB, Popov, VV
et al
. (2010). Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures .
APPLIED PHYSICS LETTERS,
96(4), 10.1063/1.3292019
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Industry Collaboration
International Collaboration
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Additional Document Info
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Overview
cited authors
Muravjov, AV; Veksler, DB; Popov, VV; Polischuk, OV; Pala, N; Hu, X; Gaska, R; Saxena, H; Peale, RE; Shur, MS
sustainable development goals
SDG 03: Good Health and Well-being
authors
Pala, Nezih
publication date
January 25, 2010
published in
APPLIED PHYSICS LETTERS
Journal
Research
keywords
DETECTORS
FIELD-EFFECT TRANSISTOR
III-V semiconductors
INVERSION-LAYERS
MODES
Physical Sciences
Physics
Physics, Applied
Science & Technology
aluminium compounds
gallium compounds
high electron mobility transistors
plasmonics
terahertz waves
wide band gap semiconductors
Identifiers
Digital Object Identifier (DOI)
https://doi.org/10.1063/1.3292019
Additional Document Info
publisher
AMER INST PHYSICS
volume
96
issue
4