Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures Article

Muravjov, AV, Veksler, DB, Popov, VV et al. (2010). Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures . APPLIED PHYSICS LETTERS, 96(4), 10.1063/1.3292019

Open Access Industry Collaboration International Collaboration

cited authors

  • Muravjov, AV; Veksler, DB; Popov, VV; Polischuk, OV; Pala, N; Hu, X; Gaska, R; Saxena, H; Peale, RE; Shur, MS

sustainable development goals

authors

publication date

  • January 25, 2010

webpage

published in

keywords

  • DETECTORS
  • FIELD-EFFECT TRANSISTOR
  • III-V semiconductors
  • INVERSION-LAYERS
  • MODES
  • Physical Sciences
  • Physics
  • Physics, Applied
  • Science & Technology
  • aluminium compounds
  • gallium compounds
  • high electron mobility transistors
  • plasmonics
  • terahertz waves
  • wide band gap semiconductors

Digital Object Identifier (DOI)

publisher

  • AMER INST PHYSICS

volume

  • 96

issue

  • 4