On the maximum effective mobility enhancement in thin-film SOI MOSFET
Conference
Ortiz-Conde, A, Garcia Sanchez, EJ, Schmidt, PE et al. (1990). On the maximum effective mobility enhancement in thin-film SOI MOSFET
. 21(pt 4), 1689-1693.
Ortiz-Conde, A, Garcia Sanchez, EJ, Schmidt, PE et al. (1990). On the maximum effective mobility enhancement in thin-film SOI MOSFET
. 21(pt 4), 1689-1693.
A model for the maximum effective mobility in the thin-film n-channel inversion-mode SOI MOSFET's has been developed. The model describes the maximum reduction, due to the effect of back gate bias, of the vertical front-surface electric field in terms of the devices parameters.