On the maximum effective mobility enhancement in thin-film SOI MOSFET Conference

Ortiz-Conde, A, Garcia Sanchez, EJ, Schmidt, PE et al. (1990). On the maximum effective mobility enhancement in thin-film SOI MOSFET . 21(pt 4), 1689-1693.

cited authors

  • Ortiz-Conde, A; Garcia Sanchez, EJ; Schmidt, PE; Sa-Neto, A; Andrian, J; Muci, J

authors

abstract

  • A model for the maximum effective mobility in the thin-film n-channel inversion-mode SOI MOSFET's has been developed. The model describes the maximum reduction, due to the effect of back gate bias, of the vertical front-surface electric field in terms of the devices parameters.

publication date

  • December 1, 1990

start page

  • 1689

end page

  • 1693

volume

  • 21

issue

  • pt 4