Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices Article

Zhang, ST, Ding, XM, Zhao, JM et al. (2004). Buffer-layer-induced barrier reduction: Role of tunneling in organic light-emitting devices . APPLIED PHYSICS LETTERS, 84(3), 425-427. 10.1063/1.1641166

cited authors

  • Zhang, ST; Ding, XM; Zhao, JM; Shi, HZ; He, J; Xiong, ZH; Ding, HJ; Obbard, EG; Zhan, YQ; Huang, W; Hou, XY

authors

abstract

  • The current density-voltage (J-V) characteristics of organic light-emitting devices (OLED) having buffer layers based on the WKB approximation of the tunneling model were investigated. The turn-on voltage of the device was lowered by the insertion of an insulating buffer layer of proper thickness. Good buffer layer for electron injection was observed to have high resistivity and a low conduction band minimum (CBM) level. It was found that the quantitative estimation of the optimal buffer layer thickness was related to the thickness of the organic layer.

publication date

  • January 19, 2004

published in

Digital Object Identifier (DOI)

start page

  • 425

end page

  • 427

volume

  • 84

issue

  • 3