Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode Article

Zhou, X, He, J, Liao, LS et al. (1999). Enhanced hole injection in a bilayer vacuum-deposited organic light-emitting device using a p-type doped silicon anode . APPLIED PHYSICS LETTERS, 74(4), 609-611. 10.1063/1.123161

cited authors

  • Zhou, X; He, J; Liao, LS; Lu, M; Xiong, ZH; Ding, XM; Hou, XY; Tao, FG; Zhou, CE; Lee, ST

authors

abstract

  • We report the fabrication of a vacuum-deposited light-emitting device which emits light from its top surface through an Al cathode using p-type doped silicon as the anode material. Enhanced hole injection is clearly demonstrated from the p-Si anode as compared to the indium-tin-oxide (ITO) anode. The mechanisms of hole injection from both the p-Si and ITO anodes into the organic layer are investigated and a possible model based on anode surface band bending is proposed. During the operation of the organic light-emitting device, the surface band bending of the anode plays a very important role in modifying the interfacial barrier height between the anode and the organic layer. © 1999 American Institute of Physics.

publication date

  • January 25, 1999

published in

Digital Object Identifier (DOI)

start page

  • 609

end page

  • 611

volume

  • 74

issue

  • 4