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Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction Article

Vabbina, PhaniKiran, Choudhary, Nitin, Chowdhury, Al-Amin et al. (2015). Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction . ACS APPLIED MATERIALS & INTERFACES, 7(28), 15206-15213. 10.1021/acsami.5b00887

cited authors

  • Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

authors

publication date

  • July 22, 2015

published in

keywords

  • 2D hybrid materials
  • BROAD-BAND
  • CVD
  • GRAPHENE
  • MOS2
  • Materials Science
  • Materials Science, Multidisciplinary
  • NANOSHEETS
  • Nanoscience & Nanotechnology
  • PHOTOLUMINESCENCE
  • PHOTOTRANSISTORS
  • Schottky junction
  • Science & Technology
  • Science & Technology - Other Topics
  • TRANSISTORS
  • Technology
  • atomic layer MoS2
  • graphene
  • photodetector

Digital Object Identifier (DOI)

publisher

  • AMER CHEMICAL SOC

start page

  • 15206

end page

  • 15213

volume

  • 7

issue

  • 28